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DI020N06D1

DI020N06D1 Diotec Semiconductor

di020n06d1.pdf Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.24 EUR
Mindestbestellmenge: 2500
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Technische Details DI020N06D1 Diotec Semiconductor

Description: MOSFET DPAK N 60V 0.024OHM 175C, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V.

Weitere Produktangebote DI020N06D1 nach Preis ab 0.21 EUR bis 1.55 EUR

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DI020N06D1 DI020N06D1 Hersteller : DIOTEC SEMICONDUCTOR di020n06d1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
239+ 0.3 EUR
327+ 0.22 EUR
348+ 0.21 EUR
Mindestbestellmenge: 200
DI020N06D1 DI020N06D1 Hersteller : DIOTEC SEMICONDUCTOR di020n06d1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
200+0.36 EUR
239+ 0.3 EUR
327+ 0.22 EUR
348+ 0.21 EUR
Mindestbestellmenge: 200
DI020N06D1 DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 2425 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
DI020N06D1 DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf MOSFET MOSFET, DPAK, 60V, 20A, 175C, N
auf Bestellung 1721 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
34+1.55 EUR
43+ 1.21 EUR
100+ 0.73 EUR
500+ 0.72 EUR
1000+ 0.7 EUR
2500+ 0.62 EUR
5000+ 0.58 EUR
Mindestbestellmenge: 34
DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf DI020N06D1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
DI020N06D1 DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DI020N06D1 DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DI020N06D1 DI020N06D1 Hersteller : Diotec Semiconductor di020n06d1.pdf Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produkt ist nicht verfügbar