Technische Details DI020N06D1 Diotec Semiconductor
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 45W, Bauform - Transistor: TO-252AA (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.035ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote DI020N06D1 nach Preis ab 0.23 EUR bis 1.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DI020N06D1 | Diotec Semiconductor |
Description: MOSFET DPAK N 60V 0.024OHM 175CPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DI020N06D1 | Diotec Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | Diotec Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | DIOTEC |
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 45W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | DIOTEC |
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), OberflächenmontagetariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | DIOTEC |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTECAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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DI020N06D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 571 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | Diotec Semiconductor |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1 | Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
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DI020N06D1 | Diotec Semiconductor |
Description: MOSFET DPAK N 60V 0.024OHM 175CPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 9844 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI020N06D1 |
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Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
| 7500+ | 0.36 EUR |
| DI020N06D1 |
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Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 292+ | 0.61 EUR |
| 327+ | 0.54 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.42 EUR |
| 1500+ | 0.38 EUR |
| 2500+ | 0.37 EUR |
| DI020N06D1 |
![]() |
Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 258+ | 0.68 EUR |
| 377+ | 0.46 EUR |
| 381+ | 0.44 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.23 EUR |
| DI020N06D1 |
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Hersteller: DIOTEC
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: TO-252AA (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (27-Jun-2024)
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 45W
Bauform - Transistor: TO-252AA (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.035ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 332+ | 0.75 EUR |
| 335+ | 0.69 EUR |
| 372+ | 0.57 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.39 EUR |
| DI020N06D1 |
![]() |
Hersteller: DIOTEC
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: DIOTEC - DI020N06D1 - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.035 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 332+ | 0.75 EUR |
| 335+ | 0.69 EUR |
| 372+ | 0.57 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.39 EUR |
| DI020N06D1 |
![]() |
Hersteller: DIOTEC
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC
Anzahl je Verpackung: 500 Stücke
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.75 EUR |
| DI020N06D1 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 571 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 112+ | 0.76 EUR |
| 177+ | 0.48 EUR |
| 500+ | 0.35 EUR |
| DI020N06D1 |
![]() |
Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 155+ | 1.14 EUR |
| 203+ | 0.83 EUR |
| 328+ | 0.5 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.38 EUR |
| DI020N06D1 |
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Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.5 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.4 EUR |
| 5000+ | 0.35 EUR |
| DI020N06D1 |
![]() |
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 9844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 21+ | 1.04 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |





