DI020N06D1 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Produktrezensionen
Produktbewertung abgeben
Technische Details DI020N06D1 Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.024OHM 175C, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V.
Weitere Produktangebote DI020N06D1 nach Preis ab 0.32 EUR bis 1.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DI020N06D1 | DIOTEC |
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTECAnzahl je Verpackung: 500 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
DI020N06D1 | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 45W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 581 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
DI020N06D1 | Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N |
auf Bestellung 899 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
DI020N06D1 | Diotec Semiconductor |
Description: MOSFET DPAK N 60V 0.024OHM 175CPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 4844 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DI020N06D1 |
![]() |
Hersteller: DIOTEC
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC
Anzahl je Verpackung: 500 Stücke
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R Substitute: DI020N06D1-DIO; DI020N06D1 TDI020N06D1 DIOTEC
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.74 EUR |
| DI020N06D1 |
![]() |
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 60A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 45W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 581 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 120+ | 0.71 EUR |
| 198+ | 0.43 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.32 EUR |
| DI020N06D1 |
![]() |
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N
MOSFETs MOSFET, DPAK, 60V, 20A, 175C, N
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.5 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.4 EUR |
| 5000+ | 0.35 EUR |
| DI020N06D1 |
![]() |
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Description: MOSFET DPAK N 60V 0.024OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 4844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |


