Produkte > DIOTEC SEMICONDUCTOR > DI040N03PT-AQ
DI040N03PT-AQ

DI040N03PT-AQ DIOTEC SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB0D69D43318180C7&compId=di040n03pt.pdf?ci_sign=d979be75d9a22318a27da8cf5dc07f5a37b3dabe Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
167+0.43 EUR
195+0.37 EUR
500+0.17 EUR
1000+0.16 EUR
5000+0.14 EUR
10000+0.13 EUR
Mindestbestellmenge: 167
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Technische Details DI040N03PT-AQ DIOTEC SEMICONDUCTOR

Description: MOSFET, POWERQFN 3X3, 30V, 40A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote DI040N03PT-AQ nach Preis ab 0.18 EUR bis 1.1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DI040N03PT-AQ DI040N03PT-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB0D69D43318180C7&compId=di040n03pt.pdf?ci_sign=d979be75d9a22318a27da8cf5dc07f5a37b3dabe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 120A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
195+0.37 EUR
Mindestbestellmenge: 167
Im Einkaufswagen  Stück im Wert von  UAH
DI040N03PT-AQ DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf MOSFETs MOSFET, PowerQFN 3x3, 30V, 40A, 150C, N, AEC-Q101
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.71 EUR
10+0.54 EUR
100+0.33 EUR
500+0.3 EUR
1000+0.24 EUR
5000+0.21 EUR
10000+0.18 EUR
Mindestbestellmenge: 4
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DI040N03PT-AQ DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+1.1 EUR
2500+0.57 EUR
5000+0.3 EUR
10000+0.28 EUR
Mindestbestellmenge: 1250
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DI040N03PT-AQ DI040N03PT-AQ Hersteller : DIOTEC 4408123.pdf Description: DIOTEC - DI040N03PT-AQ - Leistungs-MOSFET, n-Kanal, 30 V, 40 A, 0.007 ohm, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: QFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.007ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf DI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q
Produkt ist nicht verfügbar
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DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf DI045N03PTN-Channel Power MOSFETN-Kanal Leistungs-AEC-Q
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DI040N03PT-AQ DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf Trans MOSFET N-CH 30V 40A Automotive 8-Pin QFN EP T/R
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DI040N03PT-AQ DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI040N03PT-AQ DI040N03PT-AQ Hersteller : Diotec Semiconductor di040n03pt.pdf Description: MOSFET, POWERQFN 3X3, 30V, 40A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH