DI040P04D1-AQ DIOTEC
Hersteller: DIOTEC
Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
| Anzahl | Privatkunde |
|---|---|
| 150+ | 1.78 EUR |
| 152+ | 1.42 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI040P04D1-AQ DIOTEC
Description: MOSFET DPAK P -40V -40A 0.015? 1, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DI040P04D1-AQ nach Preis ab 0.88 EUR bis 2.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DI040P04D1-AQ | DIOTEC |
Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 52W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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DI040P04D1-AQ | Diotec Semiconductor |
Description: MOSFET DPAK P -40V -40A 0.015? 1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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DI040P04D1-AQ | Diotec Semiconductor |
Description: MOSFET DPAK P -40V -40A 0.015? 1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2485 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI040P04D1-AQ |
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Hersteller: DIOTEC
Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: TO-252AA (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.015ohm
SVHC: No SVHC (27-Jun-2024)
Description: DIOTEC - DI040P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.015 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: TO-252AA (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.015ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 131+ | 1.92 EUR |
| 136+ | 1.71 EUR |
| 157+ | 1.37 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.08 EUR |
| DI040P04D1-AQ |
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Hersteller: Diotec Semiconductor
Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.89 EUR |
| 12+ | 1.84 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| DI040P04D1-AQ |
![]() |
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET DPAK P -40V -40A 0.015? 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)


