DI045N03PT Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 30V 45A 0.
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 16W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details DI045N03PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 30V 45A 0., Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-QFN (3x3), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 16W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DI045N03PT nach Preis ab 0.45 EUR bis 1.76 EUR
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DI045N03PT | Diotec Semiconductor |
Description: MOSFET POWERQFN 3X3 N 30V 45A 0. Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-QFN (3x3) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 16W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DI045N03PT |
|
Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 30V 45A 0.
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 16W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET POWERQFN 3X3 N 30V 45A 0.
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 16W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.76 EUR |
| 20+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.45 EUR |