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Technische Details DI050N06PQ2-AQ Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 35A, Pulsed drain current: 280A, Power dissipation: 40.5W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 8.5mΩ, Mounting: SMD, Gate charge: 36.4nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote DI050N06PQ2-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DI050N06PQ2-AQ | Diotec Semiconductor |
 MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI050N06PQ2-AQ | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 280A Power dissipation: 40.5W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 36.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DI050N06PQ2-AQ |
|
Hersteller: Diotec Semiconductor
MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101
MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 50A, 8.5m?, 175C, AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI050N06PQ2-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH