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DI050N06PQ2-AQ DIOTEC SEMICONDUCTOR


di050n06pq2.pdf Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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Technische Details DI050N06PQ2-AQ DIOTEC SEMICONDUCTOR

Description: DI050N06PQ2-AQ, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.

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DI050N06PQ2-AQ DI050N06PQ2-AQ Hersteller : Diotec Semiconductor di050n06pq2.pdf Description: DI050N06PQ2-AQ
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 30V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
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DI050N06PQ2-AQ Hersteller : Diotec Semiconductor di050n06pq2.pdf
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DI050N06PQ2-AQ Hersteller : DIOTEC SEMICONDUCTOR di050n06pq2.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 280A; 40.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 280A
Power dissipation: 40.5W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 36.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH