DI060N06PQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET N-CH 60V 60A 8-POWERTDFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
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Technische Details DI060N06PQ Diotec Semiconductor
Description: MOSFET N-CH 60V 60A 8-POWERTDFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V.
Weitere Produktangebote DI060N06PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DI060N06PQ | Hersteller : Diotec Semiconductor |
MOSFETs PowerQFN 5x6, N, 60V, 60A, 7m?, 150C |
Produkt ist nicht verfügbar |
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| DI060N06PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 170A; 70W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Case: PQFN5X6 Mounting: SMD Kind of channel: enhancement Pulsed drain current: 170A Gate charge: 27nC On-state resistance: 7mΩ Power dissipation: 70W |
Produkt ist nicht verfügbar |