DI065N08D1-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET N-CH 80V 65A TO-252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.1 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| 2500+ | 0.89 EUR |
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Technische Details DI065N08D1-AQ Diotec Semiconductor
Description: MOSFET N-CH 80V 65A TO-252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DI065N08D1-AQ nach Preis ab 0.87 EUR bis 3.17 EUR
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DI065N08D1-AQ | Hersteller : Diotec Semiconductor |
MOSFETs DPAK, N, 80V, 65A, 7m?, 175C, AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI065N08D1-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 65A; Idm: 300A; 62.5W Case: DPAK; TO252AA Gate charge: 35nC On-state resistance: 7mΩ Type of transistor: N-MOSFET Drain current: 65A Power dissipation: 62.5W Drain-source voltage: 80V Pulsed drain current: 300A Kind of channel: enhancement Application: automotive industry Mounting: SMD Polarisation: unipolar |
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