
DI068N03PQ DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
30+ | 2.39 EUR |
46+ | 1.56 EUR |
127+ | 0.56 EUR |
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Technische Details DI068N03PQ DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 43A, Power dissipation: 25W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 79nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 210A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI068N03PQ nach Preis ab 2.39 EUR bis 2.39 EUR
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DI068N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 25W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 79nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 210A |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DI068N03PQ | Hersteller : DComponents |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: 150°C FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 25W Supplier Device Package: PowerQFN 5x6 Part Status: Active |
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