
DI072N06PT DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3
Case: QFN3X3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Drain-source voltage: 65V
Drain current: 46A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
120+ | 0.60 EUR |
133+ | 0.54 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
2500+ | 0.38 EUR |
5000+ | 0.37 EUR |
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Produktbewertung abgeben
Technische Details DI072N06PT DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V.
Weitere Produktangebote DI072N06PT nach Preis ab 0.39 EUR bis 0.72 EUR
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DI072N06PT | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3 Case: QFN3X3 Mounting: SMD Kind of package: reel; tape On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 43W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Drain-source voltage: 65V Drain current: 46A |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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DI072N06PT | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V |
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