Produkte > DIOTEC SEMICONDUCTOR > DI072N06PT
DI072N06PT

DI072N06PT DIOTEC SEMICONDUCTOR

di072n06pt.pdf Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3
Case: QFN3X3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Drain-source voltage: 65V
Drain current: 46A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
120+0.60 EUR
133+0.54 EUR
175+0.41 EUR
185+0.39 EUR
2500+0.38 EUR
5000+0.37 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DI072N06PT DIOTEC SEMICONDUCTOR

Description: IC, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V.

Weitere Produktangebote DI072N06PT nach Preis ab 0.39 EUR bis 0.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DI072N06PT DI072N06PT Hersteller : DIOTEC SEMICONDUCTOR di072n06pt.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 46A; Idm: 280A; 43W; QFN3X3
Case: QFN3X3
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 280A
Drain-source voltage: 65V
Drain current: 46A
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
120+0.60 EUR
133+0.54 EUR
175+0.41 EUR
185+0.39 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
DI072N06PT DI072N06PT Hersteller : Diotec Semiconductor di072n06pt.pdf Description: IC
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH