DI080N03PQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 160A
Drain current: 75A
Drain-source voltage: 30V
Gate charge: 21nC
On-state resistance: 1.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 78W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Anzahl je Verpackung: 5000 Stücke
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Technische Details DI080N03PQ DIOTEC SEMICONDUCTOR
Description: MOSFET POWERQFN 5X6 N 30V, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V.
Weitere Produktangebote DI080N03PQ
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DI080N03PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET POWERQFN 5X6 N 30V Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V |
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DI080N03PQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 30V, 80A, 150C, N |
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DI080N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 160A Drain current: 75A Drain-source voltage: 30V Gate charge: 21nC On-state resistance: 1.9mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 78W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |