DI0A4N45SQ2 Diotec Semiconductor
auf Bestellung 3440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.67 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.57 EUR |
| 4000+ | 0.54 EUR |
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Technische Details DI0A4N45SQ2 Diotec Semiconductor
Description: MOSFET 2N-CH 450V 0.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V, Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI0A4N45SQ2 nach Preis ab 0.42 EUR bis 1.67 EUR
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DI0A4N45SQ2 | Hersteller : Diotec Semiconductor |
 Description: MOSFET 2N-CH 450V 0.4A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3790 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI0A4N45SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
DI0A4N45SQ2-DIO Multi channel transistors |
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DI0A4N45SQ2 | Hersteller : Diotec Semiconductor |
Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |