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DI100N04PQ-AQ

DI100N04PQ-AQ Diotec Semiconductor


di100n04pq.pdf Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.99 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI100N04PQ-AQ Diotec Semiconductor

Description: MOSFET PWRQFN 5X6 40V 0.0021OHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote DI100N04PQ-AQ nach Preis ab 1.09 EUR bis 2.92 EUR

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DI100N04PQ-AQ DI100N04PQ-AQ Hersteller : Diotec Semiconductor di100n04pq.pdf Description: MOSFET PWRQFN 5X6 40V 0.0021OHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4766 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
10+2.08 EUR
100+1.25 EUR
500+1.19 EUR
1000+1.16 EUR
2000+1.10 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DI100N04PQ-AQ DI100N04PQ-AQ Hersteller : Diotec Semiconductor di100n04pq.pdf MOSFETs MOSFET, PowerQFN 5x6, 40V, 100A, 150C, N, AEC-Q101
auf Bestellung 4706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+2.29 EUR
100+1.37 EUR
500+1.36 EUR
1000+1.32 EUR
2500+1.16 EUR
5000+1.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DI100N04PQ-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF95C2E3B47DF780D6&compId=di100n04pq.pdf?ci_sign=c17f44f9c882aeb684e4bb716d7581f4abb6024d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI100N04PQ-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF95C2E3B47DF780D6&compId=di100n04pq.pdf?ci_sign=c17f44f9c882aeb684e4bb716d7581f4abb6024d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 400A; 83W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 400A
Power dissipation: 83W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH