Technische Details DI110N03PQ-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 70A, Pulsed drain current: 420A, Power dissipation: 35W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 2.5mΩ, Mounting: SMD, Gate charge: 163nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry.
Weitere Produktangebote DI110N03PQ-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DI110N03PQ-AQ | Diotec Semiconductor |
 MOSFETs MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DI110N03PQ-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Pulsed drain current: 420A Power dissipation: 35W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI110N03PQ-AQ |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N, AEC-Q101
MOSFETs MOSFET, PowerQFN 5x6, 30V, 110A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI110N03PQ-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 420A
Power dissipation: 35W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; Idm: 420A; 35W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 420A
Power dissipation: 35W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH