DI1A5N60D1 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.97A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 8Ω
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 190+ | 0.37 EUR |
| 279+ | 0.26 EUR |
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Technische Details DI1A5N60D1 DIOTEC SEMICONDUCTOR
Description: MOSFET DPAK N 600V 1.5A 8OHM, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V.
Weitere Produktangebote DI1A5N60D1 nach Preis ab 0.37 EUR bis 0.56 EUR
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DI1A5N60D1 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.97A; Idm: 6A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.97A Pulsed drain current: 6A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 8Ω Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI1A5N60D1 | Hersteller : Diotec Semiconductor |
Description: MOSFET DPAK N 600V 1.5A 8OHM Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V |
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