Technische Details DIT184N06 Diotec Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 100A; 208.3W, Pulsed drain current: 100A, Power dissipation: 208.3W, Polarisation: unipolar, Drain current: 184A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Kind of package: tube, Case: TO220AB, On-state resistance: 3mΩ, Mounting: THT.
Weitere Produktangebote DIT184N06
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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DIT184N06 | DIOTEC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 100A; 208.3W Pulsed drain current: 100A Power dissipation: 208.3W Polarisation: unipolar Drain current: 184A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 3mΩ Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DIT184N06 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 100A; 208.3W
Pulsed drain current: 100A
Power dissipation: 208.3W
Polarisation: unipolar
Drain current: 184A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 184A; Idm: 100A; 208.3W
Pulsed drain current: 100A
Power dissipation: 208.3W
Polarisation: unipolar
Drain current: 184A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3mΩ
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH