DJT4031N-13 Diodes Incorporated


ds31603.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 3A SOT-223-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 105MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
12500+0.25 EUR
17500+0.24 EUR
62500+0.23 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details DJT4031N-13 Diodes Incorporated

Description: TRANS NPN 40V 3A SOT-223-3, Power - Max: 1.2 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: SOT-223-3, Frequency - Transition: 105MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote DJT4031N-13 nach Preis ab 0.26 EUR bis 1.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DJT4031N-13 DJT4031N-13 Diodes Incorporated ds31603.pdf Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.78 EUR
10+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.3 EUR
2500+0.26 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DJT4031N-13 DJT4031N-13 Diodes Incorporated ds31603.pdf Description: TRANS NPN 40V 3A SOT-223-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 105MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 62822 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DJT4031N-13 ds31603.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.78 EUR
10+0.68 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.3 EUR
2500+0.26 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DJT4031N-13 ds31603.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 40V 3A SOT-223-3
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: SOT-223-3
Frequency - Transition: 105MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 62822 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH