DLA11C-TR-E onsemi
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1.1A SMD
Packaging: Bulk
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.1A
Supplier Device Package: SMD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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Technische Details DLA11C-TR-E onsemi
Description: DIODE GEN PURP 200V 1.1A SMD, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SMD, Current - Average Rectified (Io): 1.1A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, J-Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote DLA11C-TR-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DLA11C-TR-E | onsemi |
Description: DIODE GEN PURP 200V 1.1A SMD Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SMD Current - Average Rectified (Io): 1.1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DLA11C-TR-E |
|
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1.1A SMD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SMD
Current - Average Rectified (Io): 1.1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1.1A SMD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1.1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SMD
Current - Average Rectified (Io): 1.1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH