Technische Details DMA30P1200HB Littelfuse
Description: DIODE GEN PURP 1.2KV 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 11pF @ 400V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247 (IXTH), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V.
Weitere Produktangebote DMA30P1200HB
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMA30P1200HB | Hersteller : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3 Case: TO247-3 Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: double series Max. forward impulse current: 370A Kind of package: tube Type of diode: rectifying Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMA30P1200HB | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 11pF @ 400V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 (IXTH) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 1200 V |
Produkt ist nicht verfügbar |
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![]() |
DMA30P1200HB | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
DMA30P1200HB | Hersteller : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 370A; TO247-3 Case: TO247-3 Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: double series Max. forward impulse current: 370A Kind of package: tube Type of diode: rectifying Mounting: THT |
Produkt ist nicht verfügbar |