Technische Details DMC1028UVT-7 Diodes Zetex
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm, tariffCode: 85411000, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 12V, Dauer-Drainstrom Id, n-Kanal: 6.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm, Verlustleistung, p-Kanal: 1.2W, Drain-Source-Spannung Vds, n-Kanal: 12V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TSOT-26, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.2W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote DMC1028UVT-7 nach Preis ab 0.24 EUR bis 1.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMC1028UVT-7 | Diodes Incorporated |
 Description: MOSFET N/P-CH 12V 6.1A TSOT26Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 12V, 20V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1028UVT-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 12V 6.1A TSOT26 Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 12V, 20V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 12646 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1028UVT-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K |
auf Bestellung 14508 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1028UVT-7 | DIODES INC. |
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 12V Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm Verlustleistung, p-Kanal: 1.2W Drain-Source-Spannung Vds, n-Kanal: 12V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.2W Betriebstemperatur, max.: 150°C |
auf Bestellung 1588 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC1028UVT-7 | DIODES INC. |
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 12V Dauer-Drainstrom Id, n-Kanal: 6.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm Verlustleistung, p-Kanal: 1.2W Drain-Source-Spannung Vds, n-Kanal: 12V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.2W Betriebstemperatur, max.: 150°C |
auf Bestellung 1588 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 12V, 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 12V, 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
| DMC1028UVT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 12V, 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 12V 6.1A TSOT26
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Drain to Source Voltage (Vdss): 12V, 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 12646 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.31 EUR |
| DMC1028UVT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K
auf Bestellung 14508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.27 EUR |
| DMC1028UVT-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 12V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 12V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 12V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 12V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
auf Bestellung 1588 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 1.65 EUR |
| 245+ | 0.95 EUR |
| 381+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| DMC1028UVT-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 12V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 12V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMC1028UVT-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 12 V, 12 V, 6.1 A, 6.1 A, 0.025 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 6.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 12V
Dauer-Drainstrom Id, n-Kanal: 6.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.08ohm
Verlustleistung, p-Kanal: 1.2W
Drain-Source-Spannung Vds, n-Kanal: 12V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TSOT-26
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.2W
Betriebstemperatur, max.: 150°C
auf Bestellung 1588 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 1.65 EUR |
| 245+ | 0.95 EUR |
| 381+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |