| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
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Technische Details DMC21D1UDA-7B Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.455A 6DFN, Mounting Type: Surface Mount, Package / Case: 6-SMD, No Lead, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: X2-DFN0806-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel.
Weitere Produktangebote DMC21D1UDA-7B nach Preis ab 0.26 EUR bis 1.05 EUR
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DMC21D1UDA-7B | Diodes Incorporated |
 Description: MOSFET N/P-CH 20V 0.455A 6DFNPower - Max: 300mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: X2-DFN0806-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 1935 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC21D1UDA-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.455A 6DFN
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN0806-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta)
Drain to Source Voltage (Vdss): 20V
Description: MOSFET N/P-CH 20V 0.455A 6DFN
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: X2-DFN0806-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |