Weitere Produktangebote DMC3021LSD-13 nach Preis ab 0.28 EUR bis 3.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DMC3021LSD-13 | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 8.5A/7A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3021LSD-13 | DIODES/ZETEX |
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R DMC3021LSD-13 DMC3021LSD-7 DMC3021LSD TDMC3021LSD Anzahl je Verpackung: 50 Stücke |
auf Bestellung 888 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3021LSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 16331 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3021LSD-13 | Diodes Incorporated |
MOSFETs MOSFET COMP PAIR |
auf Bestellung 4745 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3021LSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Mounting: SMD Power dissipation: 2.5W Drain current: 7/-8.5A Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Drain-source voltage: 30/-30V Kind of transistor: complementary pair Kind of channel: enhancement Case: SO8 On-state resistance: 0.021/0.039Ω |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3021LSD-13 | DIODES INC. |
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 2.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 152 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DMC3021LSD-13 | DIODES INC. |
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8.5A Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm Verlustleistung, p-Kanal: 2.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm productTraceability: No Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMC3021LSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 5000+ | 0.31 EUR |
| 7500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| DMC3021LSD-13 |
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Hersteller: DIODES/ZETEX
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R DMC3021LSD-13 DMC3021LSD-7 DMC3021LSD TDMC3021LSD
Anzahl je Verpackung: 50 Stücke
Trans MOSFET N/P-CH 30V 8.5A/7A Automotive 8-Pin SO T/R DMC3021LSD-13 DMC3021LSD-7 DMC3021LSD TDMC3021LSD
Anzahl je Verpackung: 50 Stücke
auf Bestellung 888 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.66 EUR |
| DMC3021LSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 8.5A/7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16331 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 21+ | 0.85 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |
| DMC3021LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET COMP PAIR
MOSFETs MOSFET COMP PAIR
auf Bestellung 4745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.51 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
| DMC3021LSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Mounting: SMD
Power dissipation: 2.5W
Drain current: 7/-8.5A
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Drain-source voltage: 30/-30V
Kind of transistor: complementary pair
Kind of channel: enhancement
Case: SO8
On-state resistance: 0.021/0.039Ω
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 3.4 EUR |
| DMC3021LSD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 2.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.5W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 2.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.5W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
| DMC3021LSD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.5A
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 2.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: No
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.5W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMC3021LSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.014 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.5A
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.014ohm
Verlustleistung, p-Kanal: 2.5W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.014ohm
productTraceability: No
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2.5W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)