| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.46 EUR |
| 2000+ | 0.38 EUR |
| 4000+ | 0.36 EUR |
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Technische Details DMC3025LNS-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC3025LNS-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DMC3025LNS-7 | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 7.2A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMC3025LNS-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 7.2A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH