DMC3026LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.36 EUR |
5000+ | 0.34 EUR |
12500+ | 0.32 EUR |
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Technische Details DMC3026LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMC3026LSD-13 nach Preis ab 0.35 EUR bis 1.08 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMC3026LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 14855 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3026LSD-13 | Hersteller : Diodes Incorporated | MOSFET 30V N & P Comp FET Enh 20Vgss Low Rdson |
auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3026LSD-13 | Hersteller : Diodes Inc | Trans MOSFET N/P-CH 30V 6.5A/6.2A 8-Pin SO T/R |
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