Technische Details DMC3060LVTQ-13 Diodes Inc
Description: MOSFET N/P-CH 30V 3.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
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DMC3060LVTQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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DMC3060LVTQ-13 | Hersteller : Diodes Incorporated |
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