DMC3061SVTQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 546000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
6000+ | 0.23 EUR |
9000+ | 0.21 EUR |
75000+ | 0.2 EUR |
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Technische Details DMC3061SVTQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC3061SVTQ-7 nach Preis ab 0.17 EUR bis 0.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMC3061SVTQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 547393 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3061SVTQ-7 | Hersteller : Diodes Zetex | Trans MOSFET N/P-CH 30V 3.4A/2.7A Automotive 6-Pin TSOT-26 T/R |
auf Bestellung 2142000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3061SVTQ-7 | Hersteller : Diodes Zetex | Trans MOSFET N/P-CH 30V 3.4A/2.7A Automotive 6-Pin TSOT-26 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3061SVTQ-7 | Hersteller : Diodes Zetex | Trans MOSFET N/P-CH 30V 3.4A/2.7A Automotive 6-Pin TSOT-26 T/R |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3061SVTQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K |
auf Bestellung 1000 Stücke: Lieferzeit 143-147 Tag (e) |
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DMC3061SVTQ-7 | Hersteller : Diodes Inc | MOSFET BVDSS: 25V30V TSOT26 T&R 3K |
Produkt ist nicht verfügbar |