DMC3061SVTQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC3061SVTQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMC3061SVTQ-7 nach Preis ab 0.22 EUR bis 1.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMC3061SVTQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V~30V TSOT26 T and R 3K |
auf Bestellung 3361 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMC3061SVTQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.4A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 6544 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC3061SVTQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V~30V TSOT26 T and R 3K
MOSFETs MOSFET BVDSS: 25V~30V TSOT26 T and R 3K
auf Bestellung 3361 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.66 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| DMC3061SVTQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 3.4A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6544 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 27+ | 0.66 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |