| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 5000+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
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Technische Details DMC3071LVT-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMC3071LVT-13 nach Preis ab 0.18 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DMC3071LVT-13 | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 4.6A TSOT26Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 |
auf Bestellung 7561 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC3071LVT-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET N/P-CH 30V 4.6A TSOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, 254pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 95mOhm @ 3.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, 6.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
auf Bestellung 7561 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 2000+ | 0.2 EUR |
| 5000+ | 0.18 EUR |