Technische Details DMC3730UFL3-7 Diodes Zetex
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm, tariffCode: 85411000, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 1.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, Dauer-Drainstrom Id, n-Kanal: 1.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm, Verlustleistung, p-Kanal: 390mW, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: X2-DFN1310, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 390mW, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote DMC3730UFL3-7 nach Preis ab 0.13 EUR bis 1.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMC3730UFL3-7 | Diodes Zetex |
 Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3730UFL3-7 | Diodes Zetex |
Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3730UFL3-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6DFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: X2-DFN1310-6 (Type B) Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Drain to Source Voltage (Vdss): 30V Power - Max: 390mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3730UFL3-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6DFN Part Status: Active Supplier Device Package: X2-DFN1310-6 (Type B) Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA Drain to Source Voltage (Vdss): 30V Power - Max: 390mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 35669 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3730UFL3-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 3972 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3730UFL3-7 | DIODES INC. |
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 1.1A Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 390mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 390mW Betriebstemperatur, max.: 150°C |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3730UFL3-7 | DIODES INC. |
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 1.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 1.1A Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 390mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 390mW Betriebstemperatur, max.: 150°C |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMC3730UFL3-7 |
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Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R
Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| DMC3730UFL3-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R
Trans MOSFET N/P-CH 30V 1.1A/0.7A 6-Pin X2-DFN T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| DMC3730UFL3-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N/P-CH 30V 6DFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.15 EUR |
| 30000+ | 0.14 EUR |
| DMC3730UFL3-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N/P-CH 30V 6DFN
Part Status: Active
Supplier Device Package: X2-DFN1310-6 (Type B)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 1.1A, 700mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 390mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 35669 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| DMC3730UFL3-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 3972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| DMC3730UFL3-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 390mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: X2-DFN1310
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 390mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 390mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: X2-DFN1310
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 390mW
Betriebstemperatur, max.: 150°C
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 220+ | 1.14 EUR |
| 355+ | 0.65 EUR |
| 550+ | 0.39 EUR |
| 752+ | 0.29 EUR |
| DMC3730UFL3-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 390mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: X2-DFN1310
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 390mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMC3730UFL3-7 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 1.1 A, 1.1 A, 0.46 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 1.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 1.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm
Verlustleistung, p-Kanal: 390mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: X2-DFN1310
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.46ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 390mW
Betriebstemperatur, max.: 150°C
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 220+ | 1.14 EUR |
| 355+ | 0.65 EUR |
| 550+ | 0.39 EUR |
| 752+ | 0.29 EUR |