DMC4029SSDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC4029SSDQ-13 Diodes Incorporated
Description: MOSFET N/P-CH 40V 9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC4029SSDQ-13 nach Preis ab 0.52 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMC4029SSDQ-13 | Diodes Incorporated |
MOSFETs Comp ENH FET 40VDs 20Vgs 1.3W |
auf Bestellung 5187 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMC4029SSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 40V 9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7229 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC4029SSDQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs Comp ENH FET 40VDs 20Vgs 1.3W
MOSFETs Comp ENH FET 40VDs 20Vgs 1.3W
auf Bestellung 5187 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.55 EUR |
| 5000+ | 0.52 EUR |
| DMC4029SSDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 40V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 40V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7229 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |