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DMC4029SSDQ-13

DMC4029SSDQ-13 Diodes Incorporated


DMC4029SSD.pdf Hersteller: Diodes Incorporated
MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
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Technische Details DMC4029SSDQ-13 Diodes Incorporated

Description: MOSFET N/P-CH 40V 9A/6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

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DMC4029SSDQ-13 DMC4029SSDQ-13 Hersteller : Diodes Inc 596dmc4029ssd.pdf Trans MOSFET N/P-CH 40V 5.1A/7A Automotive 8-Pin SO T/R
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DMC4029SSDQ-13 DMC4029SSDQ-13 Hersteller : Diodes Incorporated DMC4029SSD.pdf Description: MOSFET N/P-CH 40V 9A/6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
DMC4029SSDQ-13 DMC4029SSDQ-13 Hersteller : Diodes Incorporated DMC4029SSD.pdf Description: MOSFET N/P-CH 40V 9A/6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V, 1154pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V, 10.6nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar