
DMC6022SSD-13 Diodes Incorporated
auf Bestellung 2870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.97 EUR |
10+ | 1.31 EUR |
100+ | 0.94 EUR |
500+ | 0.76 EUR |
1000+ | 0.69 EUR |
2500+ | 0.65 EUR |
5000+ | 0.62 EUR |
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Technische Details DMC6022SSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 60V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC6022SSD-13 nach Preis ab 0.71 EUR bis 2.01 EUR
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DMC6022SSD-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2133 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6022SSD-13 | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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DMC6022SSD-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V, 1525pF @ 30V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, 30.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |