| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.39 EUR |
| 5000+ | 0.35 EUR |
| 10000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMC6040SSD-13 Diodes Zetex
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 5.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 5.1A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 1.24W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.24W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMC6040SSD-13 nach Preis ab 0.29 EUR bis 1.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMC6040SSD-13 | Diodes Zetex |
 Trans MOSFET N/P-CH 60V 5.1A/3.1A 8-Pin SO T/R |
auf Bestellung 115000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC6040SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Kind of transistor: complementary pair Kind of channel: enhancement Type of transistor: N/P-MOSFET Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 5.1/-3.9A On-state resistance: 40/110mΩ Power dissipation: 1.56W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 1434 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC6040SSD-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 5386 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6040SSD-13 | Diodes Incorporated |
MOSFETs 31V to 100V Comp Pair Enh FET 60V |
auf Bestellung 4454 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6040SSD-13 | DIODES INC. |
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 1.24W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.24W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1924 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DMC6040SSD-13 | DIODES INC. |
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 5.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 5.1A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 1.24W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: No Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.24W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1924 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMC6040SSD-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET N/P-CH 60V 5.1A/3.1A 8-Pin SO T/R
Trans MOSFET N/P-CH 60V 5.1A/3.1A 8-Pin SO T/R
auf Bestellung 115000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.39 EUR |
| 5000+ | 0.33 EUR |
| 10000+ | 0.3 EUR |
| 25000+ | 0.29 EUR |
| DMC6040SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.43 EUR |
| DMC6040SSD-13 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
On-state resistance: 40/110mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 5.1/-3.9A
On-state resistance: 40/110mΩ
Power dissipation: 1.56W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 1434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 1.09 EUR |
| 113+ | 0.76 EUR |
| 145+ | 0.58 EUR |
| 162+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| DMC6040SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 60V 5.1A/3.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V
Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 5386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.54 EUR |
| DMC6040SSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 31V to 100V Comp Pair Enh FET 60V
MOSFETs 31V to 100V Comp Pair Enh FET 60V
auf Bestellung 4454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.44 EUR |
| 5000+ | 0.4 EUR |
| DMC6040SSD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.24W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.24W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.24W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.24W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1924 Stücke:
Lieferzeit 14-21 Tag (e)
| DMC6040SSD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.24W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: No
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.24W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMC6040SSD-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 5.1 A, 5.1 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 5.1A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 1.24W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: No
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.24W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1924 Stücke:
Lieferzeit 14-21 Tag (e)