auf Bestellung 2131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.48 EUR |
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Technische Details DMC6040SSDQ-13 Diodes Incorporated
Description: MOSFET N/P-CH 60V 5.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.24W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V, Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC6040SSDQ-13 nach Preis ab 0.55 EUR bis 1.9 EUR
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DMC6040SSDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N/P-CH 60V 5.1A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1289 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6040SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 60V 5.1A/3.1A Automotive AEC-Q101 8-Pin SO T/R |
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DMC6040SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 60V 5.1A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.24W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V, 1030pF @ 30V Rds On (Max) @ Id, Vgs: 40mOhm @ 8A, 10V, 110mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 19.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
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DMC6040SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 5.6/-3.6A Power dissipation: 1.24W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.055/0.13Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |