DMC6070LND-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
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Technische Details DMC6070LND-7 Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A, Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V, Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXB).
Weitere Produktangebote DMC6070LND-7 nach Preis ab 0.43 EUR bis 1.92 EUR
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DMC6070LND-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 1208 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC6070LND-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
auf Bestellung 79750 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC6070LND-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 1208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.52 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.55 EUR |
| 2000+ | 0.43 EUR |
| DMC6070LND-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
Description: MOSFET N/P-CH 60V 3.1A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
auf Bestellung 79750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |