DMG1013T-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.083 EUR |
| 6000+ | 0.074 EUR |
| 9000+ | 0.07 EUR |
| 15000+ | 0.065 EUR |
| 21000+ | 0.062 EUR |
| 30000+ | 0.059 EUR |
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Technische Details DMG1013T-7 Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 460mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V.
Weitere Produktangebote DMG1013T-7 nach Preis ab 0.044 EUR bis 0.41 EUR
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DMG1013T-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -6A Drain current: -330mA Power dissipation: 0.27W On-state resistance: 0.7Ω Gate-source voltage: ±6V Kind of package: 7 inch reel; tape |
auf Bestellung 6159 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG1013T-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 460MA SOT523Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V |
auf Bestellung 34843 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG1013T-7 | Diodes Incorporated |
MOSFETs MOSFET P-CHANNEL SOT-523 |
auf Bestellung 1520579 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1013T-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -330mA
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -6A
Drain current: -330mA
Power dissipation: 0.27W
On-state resistance: 0.7Ω
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
auf Bestellung 6159 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 472+ | 0.15 EUR |
| 685+ | 0.1 EUR |
| 799+ | 0.09 EUR |
| 1112+ | 0.064 EUR |
| 1247+ | 0.057 EUR |
| 3000+ | 0.048 EUR |
| 6000+ | 0.044 EUR |
| DMG1013T-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
Description: MOSFET P-CH 20V 460MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 350mA, 4.5V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.622 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 59.76 pF @ 16 V
auf Bestellung 34843 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 0.4 EUR |
| 72+ | 0.25 EUR |
| 115+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| DMG1013T-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs MOSFET P-CHANNEL SOT-523
MOSFETs MOSFET P-CHANNEL SOT-523
auf Bestellung 1520579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 12+ | 0.25 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.072 EUR |



