DMG1016VQ-13 Diodes Zetex
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.21 EUR |
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Technische Details DMG1016VQ-13 Diodes Zetex
Description: MOSFET N/P-CH 20V 0.87A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA, Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMG1016VQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMG1016VQ-13 | Hersteller : Diodes Inc |
 Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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| DMG1016VQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 700mΩ/1.3Ω Mounting: SMD Gate charge: 736.6/622.4pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke |
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DMG1016VQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 20V 0.87A/0.64A Automotive 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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DMG1016VQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.87A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 530mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
Produkt ist nicht verfügbar |
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DMG1016VQ-13 | Hersteller : Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 6Vgss |
Produkt ist nicht verfügbar |
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| DMG1016VQ-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 630/-460mA; 530mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.63/-0.46A Power dissipation: 0.53W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 700mΩ/1.3Ω Mounting: SMD Gate charge: 736.6/622.4pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |