DMG1016VQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 530mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
| 30000+ | 0.22 EUR |
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Technische Details DMG1016VQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 530mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA, Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V, Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Part Status: Active.
Weitere Produktangebote DMG1016VQ-7 nach Preis ab 0.29 EUR bis 0.76 EUR
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DMG1016VQ-7 | Diodes Incorporated |
Description: MOSFET N/P-CH 20V 0.87A SOT563 Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA Drain to Source Voltage (Vdss): 20V Power - Max: 530mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 173455 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG1016VQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.87A SOT563
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 870mA, 640mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 173455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 27+ | 0.65 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.29 EUR |