DMG2301LK-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
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Technische Details DMG2301LK-7 Diodes Incorporated
Description: MOSFET P-CH 20V 2.4A SOT23, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 840mW (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V.
Weitere Produktangebote DMG2301LK-7 nach Preis ab 0.12 EUR bis 0.7 EUR
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DMG2301LK-7 | Hersteller : DIODES/ZETEX |
Trans MOSFET P-CH 20V 2.4A Automotive 3-Pin SOT-23 DMG2301LK-7 TDMG2301LK Anzahl je Verpackung: 100 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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DMG2301LK-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 23714 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG2301LK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 2.4A SOT23 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 32906 Stücke: Lieferzeit 10-14 Tag (e) |
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