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Technische Details DMG301NU-7 Diodes Zetex
Description: MOSFET N-CH 25V 260MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V.
Weitere Produktangebote DMG301NU-7 nach Preis ab 0.18 EUR bis 1.12 EUR
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DMG301NU-7 | Diodes Incorporated |
 Description: MOSFET N-CH 25V 260MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V |
auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG301NU-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23; ESD Mounting: SMD Case: SOT23 Type of transistor: N-MOSFET Drain-source voltage: 25V Drain current: 0.23A On-state resistance: 5Ω Power dissipation: 0.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Polarisation: unipolar Kind of channel: enhancement Version: ESD |
auf Bestellung 2964 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG301NU-7 | Diodes Incorporated |
Description: MOSFET N-CH 25V 260MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V |
auf Bestellung 528000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG301NU-7 | Diodes Incorporated |
MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W |
auf Bestellung 16409 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG301NU-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
auf Bestellung 528000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.25 EUR |
| 15000+ | 0.23 EUR |
| 30000+ | 0.21 EUR |
| 75000+ | 0.2 EUR |
| DMG301NU-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23; ESD
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Power dissipation: 0.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.23A; 0.4W; SOT23; ESD
Mounting: SMD
Case: SOT23
Type of transistor: N-MOSFET
Drain-source voltage: 25V
Drain current: 0.23A
On-state resistance: 5Ω
Power dissipation: 0.4W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
auf Bestellung 2964 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 132+ | 0.64 EUR |
| 207+ | 0.42 EUR |
| 307+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| DMG301NU-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
Description: MOSFET N-CH 25V 260MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
auf Bestellung 528000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.29 EUR |
| DMG301NU-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
MOSFETs 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
auf Bestellung 16409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.12 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |