auf Bestellung 723000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMG3413L-7 Diodes Zetex
Description: MOSFET P-CH 20V 3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V.
Weitere Produktangebote DMG3413L-7 nach Preis ab 0.15 EUR bis 1.09 EUR
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DMG3413L-7 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R |
auf Bestellung 717000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG3413L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V |
auf Bestellung 723000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG3413L-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V |
auf Bestellung 725961 Stücke: Lieferzeit 21-28 Tag (e) |
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DMG3413L-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS |
auf Bestellung 5214 Stücke: Lieferzeit 14-28 Tag (e) |
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DMG3413L-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3413L-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG3413L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG3413L-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.9A; Idm: -20A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.9A Pulsed drain current: -20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |