DMG3420UQ-7 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details DMG3420UQ-7 Diodes Zetex
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V, Power Dissipation (Max): 740mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMG3420UQ-7 nach Preis ab 0.14 EUR bis 1.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMG3420UQ-7 | Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V Power Dissipation (Max): 740mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 168000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG3420UQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23 Case: SOT23 Mounting: SMD Pulsed drain current: 20A Power dissipation: 0.74W Gate charge: 5.4nC Polarisation: unipolar Drain current: 3.43A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 7 inch reel; tape On-state resistance: 91mΩ |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| DMG3420UQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG3420UQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
Power Dissipation (Max): 740mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 168000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| 75000+ | 0.14 EUR |
| DMG3420UQ-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 20A
Power dissipation: 0.74W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: 3.43A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 91mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.43A; Idm: 20A; 740mW; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 20A
Power dissipation: 0.74W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: 3.43A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 7 inch reel; tape
On-state resistance: 91mΩ
auf Bestellung 402 Stücke:
Lieferzeit 14-21 Tag (e)
| DMG3420UQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.38 EUR |
| 3000+ | 0.21 EUR |