auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.24 EUR |
Produktrezensionen
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Technische Details DMG4466SSSL-13 Diodes Zetex
Description: MOSFET N-CH 30V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V, Power Dissipation (Max): 1.42W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V.
Weitere Produktangebote DMG4466SSSL-13 nach Preis ab 0.29 EUR bis 1.43 EUR
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DMG4466SSSL-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4466SSSL-13 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch MOSFET 30V 60A IDM 1.42W PD |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4466SSSL-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V Power Dissipation (Max): 1.42W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478.9 pF @ 15 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4466SSSL-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG4466SSSL-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMG4466SSSL-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 10A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMG4466SSSL-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6A; Idm: 60A; 1.42W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 30V Drain current: 6A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 1.42W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |