DMG4468LK3-13 Diodes Zetex
auf Bestellung 85000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.24 EUR |
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Technische Details DMG4468LK3-13 Diodes Zetex
Description: MOSFET N-CH 30V 9.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V, Power Dissipation (Max): 1.68W (Ta), Vgs(th) (Max) @ Id: 1.95V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V.
Weitere Produktangebote DMG4468LK3-13 nach Preis ab 0.29 EUR bis 1.41 EUR
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DMG4468LK3-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 9.7A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4468LK3-13 | Hersteller : Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A |
auf Bestellung 2125 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4468LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 9.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V Power Dissipation (Max): 1.68W (Ta) Vgs(th) (Max) @ Id: 1.95V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V |
auf Bestellung 11593 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG4468LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMG4468LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 Mounting: SMD Case: TO252 Drain-source voltage: 30V Drain current: 6.3A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 1.68W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 18.85nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG4468LK3-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| DMG4468LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252 Mounting: SMD Case: TO252 Drain-source voltage: 30V Drain current: 6.3A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 1.68W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 18.85nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 48A |
Produkt ist nicht verfügbar |