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DMG4468LK3-13

DMG4468LK3-13 Diodes Zetex


3090ds31958.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 85000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.26 EUR
Mindestbestellmenge: 2500
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Technische Details DMG4468LK3-13 Diodes Zetex

Description: MOSFET N-CH 30V 9.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V, Power Dissipation (Max): 1.68W (Ta), Vgs(th) (Max) @ Id: 1.95V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V.

Weitere Produktangebote DMG4468LK3-13 nach Preis ab 0.3 EUR bis 0.95 EUR

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DMG4468LK3-13 DMG4468LK3-13 Hersteller : Diodes Incorporated DIODS20037_1-2512468.pdf MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A
auf Bestellung 2500 Stücke:
Lieferzeit 756-760 Tag (e)
Anzahl Preis ohne MwSt
4+0.92 EUR
10+ 0.78 EUR
100+ 0.58 EUR
500+ 0.46 EUR
1000+ 0.36 EUR
2500+ 0.3 EUR
Mindestbestellmenge: 4
DMG4468LK3-13 DMG4468LK3-13 Hersteller : Diodes Incorporated DMG4468LK3.pdf Description: MOSFET N-CH 30V 9.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V
Power Dissipation (Max): 1.68W (Ta)
Vgs(th) (Max) @ Id: 1.95V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 19
DMG4468LK3-13 DMG4468LK3-13 Hersteller : Diodes Inc 3090ds31958.pdf Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMG4468LK3-13 Hersteller : DIODES INCORPORATED DMG4468LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMG4468LK3-13 DMG4468LK3-13 Hersteller : Diodes Zetex 3090ds31958.pdf Trans MOSFET N-CH 30V 9.7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMG4468LK3-13 DMG4468LK3-13 Hersteller : Diodes Incorporated DMG4468LK3.pdf Description: MOSFET N-CH 30V 9.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 11.6A, 10V
Power Dissipation (Max): 1.68W (Ta)
Vgs(th) (Max) @ Id: 1.95V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 15 V
Produkt ist nicht verfügbar
DMG4468LK3-13 Hersteller : DIODES INCORPORATED DMG4468LK3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.3A; Idm: 48A; 1.68W; TO252
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 6.3A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.68W
Polarisation: unipolar
Gate charge: 18.85nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 48A
Mounting: SMD
Case: TO252
Produkt ist nicht verfügbar