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Technische Details DMG4812SSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 1.54W (Ta), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG4812SSS-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMG4812SSS-13 | Diodes Incorporated |
 Description: MOSFET N-CH 30V 8A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMG4812SSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMG4812SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG4812SSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.54W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH