DMG4932LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 9.5A 8SO
Power - Max: 1.19W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 30V
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Technische Details DMG4932LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 9.5A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.19W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMG4932LSD-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
DMG4932LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 9.5A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.19W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
DMG4932LSD-13 | Diodes Incorporated |
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMG4932LSD-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 9.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.19W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 9.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.19W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMG4932LSD-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


