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DMG6301UDW-13

DMG6301UDW-13 Diodes Incorporated

DMG6301UDW.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
30000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMG6301UDW-13 Diodes Incorporated

Description: MOSFET 2N-CH 25V 0.24A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 240mA, Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-363.

Weitere Produktangebote DMG6301UDW-13 nach Preis ab 0.11 EUR bis 0.65 EUR

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DMG6301UDW-13 DMG6301UDW-13 Hersteller : Diodes Incorporated DMG6301UDW.pdf Description: MOSFET 2N-CH 25V 0.24A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 240mA
Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMG6301UDW-13 DMG6301UDW-13 Hersteller : Diodes Inc dmg6301udw.pdf Trans MOSFET N-CH 25V 0.24A 6-Pin SOT-363 T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
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DMG6301UDW-13 Hersteller : DIODES INCORPORATED DMG6301UDW.pdf DMG6301UDW-13 SMD N channel transistors
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DMG6301UDW-13 DMG6301UDW-13 Hersteller : Diodes Incorporated DMG6301UDW.pdf MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W
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