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DMG6302UDW-7 Diodes Inc


Hersteller: Diodes Inc
MOSFET BVDSS: 25V30V SOT363 T&R 3K
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Technische Details DMG6302UDW-7 Diodes Inc

Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -25V, Drain current: -120mA, Power dissipation: 0.38W, Case: SOT363, Gate-source voltage: ±8V, On-state resistance: 13Ω, Mounting: SMD, Gate charge: 340pC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 10 Stücke.

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DMG6302UDW-7 DMG6302UDW-7 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -120mA
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
DMG6302UDW-7 Hersteller : Diodes Incorporated DIOD_S_A0012994438_1-2513091.pdf MOSFET MOSFET BVDSS: 25V~30V SOT363 T&R 3K
Produkt ist nicht verfügbar
DMG6302UDW-7 DMG6302UDW-7 Hersteller : DIODES INCORPORATED Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -25V; -120mA; 380mW; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -120mA
Power dissipation: 0.38W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 340pC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar