DMG6898LSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.46 EUR |
| 5000+ | 0.44 EUR |
| 7500+ | 0.38 EUR |
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Technische Details DMG6898LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMG6898LSD-13 nach Preis ab 0.44 EUR bis 1.87 EUR
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DMG6898LSD-13 | Diodes Incorporated |
MOSFETs MOSFET N-CHAN |
auf Bestellung 31461 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6898LSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 9.5A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9.5A Drain to Source Voltage (Vdss): 20V Power - Max: 1.28W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 11806 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMG6898LSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET N-CHAN
MOSFETs MOSFET N-CHAN
auf Bestellung 31461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.44 EUR |
| DMG6898LSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.28W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Description: MOSFET 2N-CH 20V 9.5A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.28W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 11806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |