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DMG6898LSD-13

DMG6898LSD-13 Diodes Incorporated

DMG6898LSD.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.39 EUR
5000+0.37 EUR
7500+0.32 EUR
Mindestbestellmenge: 2500
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Technische Details DMG6898LSD-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 9.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.28W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote DMG6898LSD-13 nach Preis ab 0.41 EUR bis 1.57 EUR

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DMG6898LSD-13 DMG6898LSD-13 Hersteller : Diodes Incorporated DIOD_S_A0000148450_1-2541912.pdf MOSFETs MOSFET N-CHAN
auf Bestellung 37651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.97 EUR
10+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 3
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DMG6898LSD-13 DMG6898LSD-13 Hersteller : Diodes Incorporated DMG6898LSD.pdf Description: MOSFET 2N-CH 20V 9.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.28W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 11806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
19+0.97 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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DMG6898LSD-13 Hersteller : DIODES INCORPORATED DMG6898LSD.pdf DMG6898LSD-13 SMD N channel transistors
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