DMG6968UQ-7 Diodes Zetex
auf Bestellung 366000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details DMG6968UQ-7 Diodes Zetex
Description: MOSFET N-CH 20V 6.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V.
Weitere Produktangebote DMG6968UQ-7 nach Preis ab 0.14 EUR bis 0.72 EUR
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DMG6968UQ-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 20V 6.5A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6968UQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V |
auf Bestellung 366000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 6.5A Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMG6968UQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 6.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V |
auf Bestellung 368415 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UQ-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 20Vdss 12Vgss 30A |
auf Bestellung 23065 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG6968UQ-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 6.5A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG6968UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 6.5A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG6968UQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 6.5A Automotive AEC-Q101 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMG6968UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Application: automotive industry Drain-source voltage: 20V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMG6968UQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 1.3W; SOT23 Power dissipation: 1.3W Kind of package: reel; tape Case: SOT23 Mounting: SMD Application: automotive industry Drain-source voltage: 20V Drain current: 6.5A On-state resistance: 21mΩ Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |