Weitere Produktangebote DMG9926UDM-7 nach Preis ab 0.22 EUR bis 1.2 EUR
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DMG9926UDM-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 4.2A SOT26Drain to Source Voltage (Vdss): 20V Power - Max: 980mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.2A |
auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926UDM-7 | Diodes Incorporated |
MOSFETs MOSFET SOT-26 20V, 3.2/4.2A |
auf Bestellung 3628 Stücke: Lieferzeit 10-14 Tag (e) |
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DMG9926UDM-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 4.2A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 41871 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG9926UDM-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.2A SOT26
Drain to Source Voltage (Vdss): 20V
Power - Max: 980mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Description: MOSFET 2N-CH 20V 4.2A SOT26
Drain to Source Voltage (Vdss): 20V
Power - Max: 980mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.22 EUR |
| DMG9926UDM-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET SOT-26 20V, 3.2/4.2A
MOSFETs MOSFET SOT-26 20V, 3.2/4.2A
auf Bestellung 3628 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.25 EUR |
| DMG9926UDM-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 4.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET 2N-CH 20V 4.2A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 980mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 41871 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.2 EUR |
| 24+ | 0.75 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |