DMJ70H900HJ3 Diodes Incorporated

Description: MOSFET N-CH 700V 7A TO251, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-251, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.