DMJT9435-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 30V 3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.2 W
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Technische Details DMJT9435-13 Diodes Incorporated
Description: TRANS PNP 30V 3A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A, DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V, Frequency - Transition: 160MHz, Supplier Device Package: SOT-223-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 1.2 W.
Weitere Produktangebote DMJT9435-13 nach Preis ab 0.27 EUR bis 1.15 EUR
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DMJT9435-13 | Diodes Incorporated |
Description: TRANS PNP 30V 3A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V Frequency - Transition: 160MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.2 W |
auf Bestellung 5086 Stücke: Lieferzeit 10-14 Tag (e) |
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DMJT9435-13 | Diodes Incorporated |
Bipolar Transistors - BJT LOW VSAT PNP SMT |
auf Bestellung 1686 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMJT9435-13 |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 30V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.2 W
Description: TRANS PNP 30V 3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.2 W
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 25+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| DMJT9435-13 |
![]() |
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT LOW VSAT PNP SMT
Bipolar Transistors - BJT LOW VSAT PNP SMT
auf Bestellung 1686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.27 EUR |
